SDK to Start the 3rd Expansion of High-Grade SiC Epitaxial-wafer Production Facilities in the Last 2 Years


SDK to Start the 3rd Expansion of High-Grade SiC Epitaxial-wafer Production Facilities in the Last 2 Years
—Establishing Stable Supply System to Respond to Rapid Market Growth—

Showa Denko K.K.
July 3, 2018

Showa Denko (SDK) (TOKYO: 4004) has decided to farther expand its capacity to produce high-quality-grade silicon carbide (SiC) epitaxial wafers for power semiconductors, which have already been marketed under the trade name of “High-Grade Epi” (HGE), in addition to currently conducted expansion work of the HGE production facilities. After the current expansion work which is scheduled to be finished in this September, SDK’s capacity to produce HGE will be increased from current 5,000 wafers*1 per month to 7,000 wafers per month. After the additional expansion work decided this time, which is to be finished in February 2019, that capacity will be increased to 9,000 wafers per month.

When compared with the currently mainstream silicon-based semiconductors, SiC-based power semiconductors can operate under high-temperature, high-voltage, and high-current conditions, while substantially conserving energy. These features enable device manufacturers to produce smaller, lighter, and more energy-efficient next-generation power control modules. In addition to the use in power modules for dispersion type power sources to utilize new energy sources, power modules for servers in data centers, and inverter modules for railcars, SiC-based power semiconductors are now replacing conventional silicon-based semiconductors for use in on-board battery chargers and rapid charging stations for EVs, in parallel with rapid expansion of the EV market.

SDK’s SiC epitaxial wafer business has been acclaimed by power semiconductor manufacturers for the lowest incidence of crystal defects and the highest homogeneity of wafers in the world which SDK’s HGE achieved. In the last two years, SDK decided to start expansion of its HGE production facilities twice, in September 2017 and January 2018*2. SDK decided this time again to farther expand the HGE production facilities in order to respond to the growing need of our customers for HGE resulting from rapid growth of the market for SiC-based power semiconductors.

SDK will continue improving the quality of its SiC epitaxial wafer products and supplying them to the rapidly growing SiC power semiconductor market in timely and stable manner, while securing top-level market share.

*1This number is based on a conversion into SiC epitaxial wafers for power devices having withstanding voltage of 1,200 V.

**2“SDK to Re-expand Capacity to Produce High-Grade SiC Epitaxial Wafers,” announced on January 23, 2018

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