SDK’s 6” SiC Epitaxial Wafers for Power Devices Awarded Grand Prix

04/06/2014

Showa Denko (SDK) (TOKYO: 4004) received, for its six-inch silicon carbide (SiC) epitaxial wafers for power devices, The Semiconductor Industry News’ “Semiconductor of the Year 2014 Grand Prix” in the category of electronic materials for semiconductors.

The prize covers the three categories of semiconductor devices, semiconductor production equipment, and electronic materials for semiconductors.  Out of semiconductor-related products announced in the period from April 2013 through March 2014, one Grand Prix and two outstanding performance awards were given to selected products in each category.  The criteria for selection included the novelty of development, establishment of a volume production system, impact on society, and prospects for future success.

When compared with the mainstream silicon-based semiconductors, SiC power devices using SiC epitaxial wafers can operate under high-temperature and high-voltage conditions, while substantially reducing energy loss.  These features enable the production of smaller and more energy-efficient power control modules.  SiC power devices are increasingly used as power sources of servers for data centers, distributed power supply systems for new energies, and subway railcars.

Crystal defects in our six-inch SiC epitaxial wafers are limited to the level of crystal defects in conventional four-inch SiC epitaxial wafers.  Thus, the six-inch SiC epitaxial wafers satisfy the conditions for use in heavy-current SiC devices for automotive inverters, in terms of both product quality and cost.  Demand for SiC power devices is expected to increase in around 2020 for use in hybrid cars and electric vehicles.  SDK will continue its efforts to improve product quality and increase production capacity, thereby contributing to the spread of SiC power devices.

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