Electronics

SiC Epitaxial Wafer

 

Superior heat resistance, conductivity and energy efficiency.

SiC power devices using silicon carbide epitaxial wafers can operate under high-voltage, heavy current and at high temperatures compared to silicon-based semiconductors. These features enable reductions in the number of components and miniaturization of cooling devices, helping to make smaller and lighter power control modules.

SiC power devices also reduce energy loss in the power control process, resulting in a substantial energy savings.

Showa Denko’s SiC epitaxial wafers, having high surface smoothness, are especially valued highly for use in high-quality SiC-MOSFET.

Production besides the standard specification is possible, please contact us for further details.

 

Standard specification of SiC epitaxial wafer for power device application – (0001) Si-face 4”/6”

Item Specs 4” Typical Specs 6” Typical
Diameter1 4’’ (100 mm) 6’’ (150 mm)
Poly-type 4H 4H
Off orientation toward <1120> 4 deg off 4 deg off
Conductivity n-type n-type
Dopant Nitrogen Nitrogen
Carrier concentration 1E15 – 2E18/cm3 1E15 – 2E18/cm3
All measurement points2 ± 15 % ± 7 % ± 25 % ± 15 %
Thickness ≤ 30 µm ≤ 30 µm
All measurement points3 ± 10 % ± 7 % ± 15 % ± 10 %
Surface defect4 ≤ 1,0 cm2 0,2 – 0,5 cm-2 ≤ 1,0 cm2 0,2 – 0,5 cm-2
Usable area 5 ≥ 95 % 97 % ≥ 95 % 97 %
Step bunching6 ≤ 2,0 nm (Rq) 0,6 nm ≤ 2,0 nm (Rq) 0,6 nm
Scratches7 < 1 x wafer diameter 0 < 1 x wafer diameter 0

Standard buffer layer: n = 1E18/cm³, thickness = 0,5 µm
3’’ wafers are available on request. Typical uniformity (13 points) is included within 4’’ range

1 Other dimensional specifications are similar to definition in SEMI M12
2
All measurement points (4’’/6” = 9 points)
3 All measurement points (4’’/6” = 21 points)
4 Approx. 10 µm over size and clear defects. Intensity and cross section area of reflected ray from the defect are 20 % and 1000 µm²
5 2 mm² mesh areas in whole wafer surface without surface defect
6 FFT for the circumferential roughness image. Calculation area is around 90° and 270°, effective for step bunching
7 Cumulative length of strings with approx. 0,3 µm over size defects

 

Standard specification of SiC epitaxial wafer for power device application – (0001) C-face 4”/6”

Item Specs 4” Typical Specs 6” Typical
Diameter1 4’’ (100 mm) 6’’ (150 mm)
Poly-type 4H 4H
Off orientation toward <1120> 4 deg off 4 deg off
Conductivity n-type n-type
Dopant Nitrogen Nitrogen
Carrier concentration 5E15 – 2E18/cm3 5E15 – 2E18/cm3
All measurement points2 ± 20 % ± 15 % ± 30 % ± 20 %
Thickness ≤ 30 µm ≤ 30 µm
All measurement points3 ± 15 % ± 10 % ± 20 % ± 10 %
Surface defect4 ≤ 1,0 cm-2 0,2 – 0,5 cm-2 ≤ 1,0 cm-2 0,2 – 0,5 cm-2
Usable area 5 ≥ 95 % 97 % ≥ 95 % 97 %
Step bunching6 ≤ 2,0 nm (Rq) 0,6 nm ≤ 2,0 nm (Rq) 0,6 nm
Scratches7 < 1 x wafer diameter 0 < 1 x wafer diameter 0

Standard buffer layer: n = 1E18/cm³, thickness = 0,5 µm,
3’’ wafers are available on request. Typical uniformity (13 points) is included within 4’’ range


1 Other dimensional specifications are similar to definition in SEMI M12
2
All measurement points (4’’/6” = 9 points)
3 All measurement points (4’’/6” = 21 points)
4 Approx. 10 µm over size and clear defects. Intensity and cross section area of reflected ray from the defect are 20 % and 1000 µm²
5 2 mm² mesh areas in whole wafer surface without surface defect
6 FFT for the circumferential roughness image. Calculation area is around 90° and 270°, effective for step bunching
7 Cumulative length of strings with approx. 0,3 µm over size defects

 

Specification of high grade SiC epitaxial wafer for power device application – (0001) Si-face 4”and 6”

Item Specs 4’’ Typical Specs 6’’ Typical
Diameter1 4”(100mm) 6” (150mm)
Poly-type 4H 4H
Surface (0001) Si-face (0001) Si-face
Off-orientation toward <1120> 4 deg off 4 deg off
Conductivity n-type n-type
Dopant Nitrogen Nitrogen
Carrier Concentration 3E14-2E18/cm³ 3E14-2E18/cm³
All measurement points2 ± 12% ± 6 % ± 20% ± 10%
Thickness ≤ 150 µm ≤ 150 µm
All measurement points2 ± 8% ± 3% ± 12% ± 5%
Surface Defect (SD)3 ≤ 0.2/cm² (THK ≤ 30um) ≤ 0.2/cm² (THK ≤ 30um)
BPD 0.1/cm² 0.1/cm²
Step Bunching (Roughness)4 ≤ 2,0 nm (Rq) 0,6nm ≤ 2,0 nm (Rq) 0,6nm
Scratches5 < 1 x wafer diameter (0mm) < 1 x wafer diameter (0mm)

 

Other dimensional specifications are similar to definition in SEMI M12
2
 Measurement points: see brochure (linked below)
Approx. 10 µm over size and clear defects. Intensity and cross section area of reflected ray from the defect are 20% and 1000 µm².
FFT for the circumferential roughness image. Calculation area is around 90° and 270°, effective for step bunching
 Cumulative length of strings with approx. 0,3 µm over size defects

Notes:
1) Defect limit applies to entire surface except for edge exclusion area.
– Edge exclusion = 3mm

Options:
1) C-surface epi is available.
2) Other off orientations are available on request for provided substrates by customer.
3) Re-polish on backside after epitaxial growth is available on request.

Espacer™

 

Espacer™ – Charge dissipating agent for electron beam lithography

Espacer™ is a charge dissipation liquid polymer used for electron-beam lithography (e-beam lithography), developed by Showa Denko K.K. /Japan.

Espacer™ is a water soluble conducting polymer in weak acidic solution without any organic solvent. Espacer™ enables to draw circuits with increased accuracy. Thin films of Espacer™ are highly conductive, therefore solving problems related to positional errors during electron-beam lithography processes.

Non-chemical amplified resist Positive-tone Espacer™ 300Z
Negative-tone Espacer™ 300HX02
Chemical amplified resist Positive-tone Espacer™ 300AX01
Negative-tone Espacer™ 300AX01
Packaging 100g/Bottle
Storage 5±3 °C
Impurities < 50 ppb
Sheet resistance 1 x 10³ – 5 x 107 ohm/sq
Solfine

 

Solfine is the generic product name representing Showa Denko’s high purity solvents used e.g. in semiconductor and LCD manufacturing processes. Solfine’s high purity is characterized, amongst others, by its low metal, dust and moisture content.

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