SiC Epitaxial Wafer
Electronics
Superior heat resistance, conductivity and energy efficiency.
SiC power devices using silicon carbide epitaxial wafers can operate under high-voltage, heavy current and at high temperatures compared to silicon-based semiconductors. These features enable reductions in the number of components and miniaturization of cooling devices, helping to make smaller and lighter power control modules.
SiC power devices also reduce energy loss in the power control process, resulting in a substantial energy savings.
Showa Denko’s SiC epitaxial wafers, having high surface smoothness, are especially valued highly for use in high-quality SiC-MOSFET.
Production besides the standard specification is possible, please contact us for further details.
Standard specification of SiC epitaxial wafer for power device application – (0001) Si-face 4”/6”
| Item | Specs 4” | Typical | Specs 6” | Typical |
| Diameter1 | 4’’ (100 mm) | – | 6’’ (150 mm) | – |
| Poly-type | 4H | – | 4H | – |
| Off orientation toward <1120> | 4 deg off | – | 4 deg off | – |
| Conductivity | n-type | – | n-type | – |
| Dopant | Nitrogen | – | Nitrogen | – |
| Carrier concentration | 1E15 – 2E18/cm3 | – | 1E15 – 2E18/cm3 | – |
| All measurement points2 | ± 15 % | ± 7 % | ± 25 % | ± 15 % |
| Thickness | ≤ 30 µm | – | ≤ 30 µm | – |
| All measurement points3 | ± 10 % | ± 7 % | ± 15 % | ± 10 % |
| Surface defect4 | ≤ 1,0 cm–2 | 0,2 – 0,5 cm-2 | ≤ 1,0 cm–2 | 0,2 – 0,5 cm-2 |
| Usable area 5 | ≥ 95 % | 97 % | ≥ 95 % | 97 % |
| Step bunching6 | ≤ 2,0 nm (Rq) | 0,6 nm | ≤ 2,0 nm (Rq) | 0,6 nm |
| Scratches7 | < 1 x wafer diameter | 0 | < 1 x wafer diameter | 0 |
Standard buffer layer: n = 1E18/cm³, thickness = 0,5 µm
3’’ wafers are available on request. Typical uniformity (13 points) is included within 4’’ range
1 Other dimensional specifications are similar to definition in SEMI M12
2 All measurement points (4’’/6” = 9 points)
3 All measurement points (4’’/6” = 21 points)
4 Approx. 10 µm over size and clear defects. Intensity and cross section area of reflected ray from the defect are 20 % and 1000 µm²
5 2 mm² mesh areas in whole wafer surface without surface defect
6 FFT for the circumferential roughness image. Calculation area is around 90° and 270°, effective for step bunching
7 Cumulative length of strings with approx. 0,3 µm over size defects
Standard specification of SiC epitaxial wafer for power device application – (0001) C-face 4”/6”
| Item | Specs 4” | Typical | Specs 6” | Typical |
| Diameter1 | 4’’ (100 mm) | – | 6’’ (150 mm) | – |
| Poly-type | 4H | – | 4H | – |
| Off orientation toward <1120> | 4 deg off | – | 4 deg off | – |
| Conductivity | n-type | – | n-type | – |
| Dopant | Nitrogen | – | Nitrogen | – |
| Carrier concentration | 5E15 – 2E18/cm3 | – | 5E15 – 2E18/cm3 | – |
| All measurement points2 | ± 20 % | ± 15 % | ± 30 % | ± 20 % |
| Thickness | ≤ 30 µm | – | ≤ 30 µm | – |
| All measurement points3 | ± 15 % | ± 10 % | ± 20 % | ± 10 % |
| Surface defect4 | ≤ 1,0 cm-2 | 0,2 – 0,5 cm-2 | ≤ 1,0 cm-2 | 0,2 – 0,5 cm-2 |
| Usable area 5 | ≥ 95 % | 97 % | ≥ 95 % | 97 % |
| Step bunching6 | ≤ 2,0 nm (Rq) | 0,6 nm | ≤ 2,0 nm (Rq) | 0,6 nm |
| Scratches7 | < 1 x wafer diameter | 0 | < 1 x wafer diameter | 0 |
Standard buffer layer: n = 1E18/cm³, thickness = 0,5 µm,
3’’ wafers are available on request. Typical uniformity (13 points) is included within 4’’ range
1 Other dimensional specifications are similar to definition in SEMI M12
2 All measurement points (4’’/6” = 9 points)
3 All measurement points (4’’/6” = 21 points)
4 Approx. 10 µm over size and clear defects. Intensity and cross section area of reflected ray from the defect are 20 % and 1000 µm²
5 2 mm² mesh areas in whole wafer surface without surface defect
6 FFT for the circumferential roughness image. Calculation area is around 90° and 270°, effective for step bunching
7 Cumulative length of strings with approx. 0,3 µm over size defects
Specification of high grade SiC epitaxial wafer for power device application – (0001) Si-face 4”and 6”
| Item | Specs 4’’ | Typical | Specs 6’’ | Typical |
| Diameter1 | 4”(100mm) | – | 6” (150mm) | – |
| Poly-type | 4H | – | 4H | – |
| Surface | (0001) Si-face | – | (0001) Si-face | – |
| Off-orientation toward <1120> | 4 deg off | – | 4 deg off | – |
| Conductivity | n-type | – | n-type | – |
| Dopant | Nitrogen | – | Nitrogen | – |
| Carrier Concentration | 3E14-2E18/cm³ | – | 3E14-2E18/cm³ | – |
| All measurement points2 | ± 12% | ± 6 % | ± 20% | ± 10% |
| Thickness | ≤ 150 µm | – | ≤ 150 µm | – |
| All measurement points2 | ± 8% | ± 3% | ± 12% | ± 5% |
| Surface Defect (SD)3 | ≤ 0.2/cm² (THK ≤ 30um) | – | ≤ 0.2/cm² (THK ≤ 30um) | – |
| BPD | – | 0.1/cm² | – | 0.1/cm² |
| Step Bunching (Roughness)4 | ≤ 2,0 nm (Rq) | 0,6nm | ≤ 2,0 nm (Rq) | 0,6nm |
| Scratches5 | < 1 x wafer diameter | (0mm) | < 1 x wafer diameter | (0mm) |
1 Other dimensional specifications are similar to definition in SEMI M12
2 Measurement points: see brochure (linked below)
3 Approx. 10 µm over size and clear defects. Intensity and cross section area of reflected ray from the defect are 20% and 1000 µm².
4 FFT for the circumferential roughness image. Calculation area is around 90° and 270°, effective for step bunching
5 Cumulative length of strings with approx. 0,3 µm over size defects
Notes:
1) Defect limit applies to entire surface except for edge exclusion area.
– Edge exclusion = 3mm
Options:
1) C-surface epi is available.
2) Other off orientations are available on request for provided substrates by customer.
3) Re-polish on backside after epitaxial growth is available on request.
Espacer™
Espacer™ – Charge dissipating agent for electron beam lithography
Espacer™ is a charge dissipation liquid polymer used for electron-beam lithography (e-beam lithography), developed by Showa Denko K.K. /Japan.
Espacer™ is a water soluble conducting polymer in weak acidic solution without any organic solvent. Espacer™ enables to draw circuits with increased accuracy. Thin films of Espacer™ are highly conductive, therefore solving problems related to positional errors during electron-beam lithography processes.
| Non-chemical amplified resist | Positive-tone | Espacer™ 300Z |
| Negative-tone | Espacer™ 300HX02 | |
| Chemical amplified resist | Positive-tone | Espacer™ 300AX01 |
| Negative-tone | Espacer™ 300AX01 |
| Packaging | 100g/Bottle |
| Storage | 5±3 °C |
| Impurities | < 50 ppb |
| Sheet resistance | 1 x 10³ – 5 x 107 ohm/sq |
Solfine
Solfine is the generic product name representing Showa Denko’s high purity solvents used e.g. in semiconductor and LCD manufacturing processes. Solfine’s high purity is characterized, amongst others, by its low metal, dust and moisture content.